INFLUENCE OF THE RARE EARTH ELEMENT YB ON THE PHOTOLUMINOSCENCE PROPERTIES OF EPITAXIAL FILMS OF GAAS AND ALXGA1-XAS
Abstrakti
Radiation characteristics of GaAs and AlхGa1-хAs epitaxial layers with addition of rare-earth element Yb are determined by photoluminescence method. In the exciton regions of epitaxial films, new lines of photoluminescent maxima AlхGa1-хAs determined for the intended ytterbium atoms. The effect of the concentration of the ytterbium atom on the change in the photoluminescence characteristics of the GaAs and AlхGa1-хAs epitaxial films was determined.
Lataukset
Lähdeviitteet
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